TMA, Aluminum trimethanide
Linear Formula:
CAS Number:
Molecular Weight:
Beilstein/REAXYS Number:
EC Number:
MDL number:
PubChem Substance ID:

Quality Level

vapor pressure

69.3 mmHg ( 60 °C)


heat of vaporization: ~41.9 kJ/mol (dimer)





reaction suitability

core: aluminum


125-126 °C (lit.)
127 °C/760 mmHg
20 °C/8 mmHg
56 °C/50 mmHg


15 °C (lit.)


0.752 g/mL at 25 °C (lit.)

SMILES string




InChI key


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General description

Trimethylaluminum (TMA) is the most reactive and volatile among all organoaluminium compounds. It is extremely pyrophoric. It acts as a highly reactive reducing and alkylating agent.


TMA is used in a Ziegler Natta catalyst for polymerization and hydrogenation. TMA is mainly used for the production of methylaluminoxane, such as metalorganic chemical vapor deposition (MOCVD) of:
  • Al2O3 using TMA and O2 precursors.
  • Al4C3 layers have been grown on Al2O3 (0001) using TMA and methane as source materials for aluminum and carbon.


100 g in Sure-Pac™

Other Notes

Storage below 20°C may cause crystallization.

Recommended products

Angled septum-inlet adapter Z118206 or straight septum-inlet adapter, 6mm I.D. inlet, Z118141 or straight septum-inlet adapter, 13mm I.D. inlet, Z118192 is recommended.



Signal Word


Hazard Statements

Supp Hazards


Personal Protective Equipment

dust mask type N95 (US),Eyeshields,Gloves


UN 3394 4.3(4.2) / PGI

WGK Germany


Flash Point(F)

No data available

Flash Point(C)

No data available

Photo-induced current and its degradation in Al4C3/Al2O3 (0001) grown by metalorganic chemical vapor deposition
Kim D, et al.
Thin Solid Films, 557, 216-221 (2014)
Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity
Liu X, et al.
Journal of Crystal Growth, 408, 78-84 (2014)
Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion
Oili ME, et al.
Thin Solid Films, 552, 124-135 (2014)
G R V de Sousa et al.
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